Purpose: the installation provides non-destructive quality control when performing technological operations of ion or diffusion alloying of silicon wafers with a diameter of up to 200 mm.
Advantages: the SCAN-2019 installation provides functionality similar to the installations of Semilab (USA), with a 60% lower cost. There are no analogues in the CIS space.
Main characteristics:
Advantages: the SCAN-2019 installation provides functionality similar to the installations of Semilab (USA), with a 60% lower cost. There are no analogues in the CIS space.
Main characteristics:
- the main controlled parameter is the electrical resistivity of ion–doped and diffusion layers on semiconductor wafers in the range of values from 10 to 100,000 ohms / (Ohms/kv);
- the diameter of the controlled wafers: 100-200 mm; the range of control of the electrical potential of the surface of the silicon-dielectric structure: ± (2...2500) mV;
- dynamic error in measuring the electrical potential of the surface of the silicon dielectric structure: no more than 2.0 mV;
- an additional impact factor is optical illumination of the surface of the instrument structure by radiation of various wavelengths;
- spatial resolution - at least 0.5 mm;
- maximum number of mapping points - from 100 to 10,000.
Developers: Zharin A.L., Doctor of Engineering Science, Professor, Vorobey I.V., Vorobey R.I., PhD in Engineering, Associate Professor, Gusev O.K., Doctor of Engineering Science, Professor, Mikitevich V.A., Mironovich N.M., Panteleev K.V., PhD in Engineering, Associate Professor, Samarina A.V., Svistun A.I., PhD in Engineering, Associate Professor, Tyavlovsky A.K., PhD in Engineering, Associate Professor, Tyavlovsky K.L., PhD in Physical and Mathematical Sciences, Associate Professor, Shadurskaya L.I., PhD in Physical and Mathematical Sciences, Associate Professor
Contacts: tel. +375 (17) 293 96 85, e-mail: ontim@bntu.by