Measuring device for non-destructive non-contact characterization of semiconductor structures with submicron layers according to the parameters of the spatial distribution of lifetime and iron impurities in p-type silicon

23 june 2023

Instrumentation Engineering

Measuring device for non-destructive non-contact characterization of semiconductor structures with submicron layers according to the parameters of the spatial distribution of lifetime and iron impurities in p-type silicon

Main characteristics: The SCAN-2015 installation provides non-destructive non-contact characterization of semiconductor wafers with submicron layers according to the parameters of the spatial distribution of the lifetime of nonequilibrium charge carriers and iron impurities in p-type silicon by analyzing the difference spatial distributions of the electric potential of the surface obtained before and after short-term annealing of the plate surface at a temperature of about 200 ° C. Spatial images of the distribution of the electrical potential of the surface of instrument structures with submicron layers made on silicon wafers with a diameter of 200 or 150 mm are formed in the process of two-coordinate scanning of the plate surface with an electrometric probe through an air gap. The spatial distribution of the electrical potential of the surface of a semiconductor wafer with submicron layers is displayed on the display of the control PC in the form of a color topogram, where the value of the measured potential is displayed in a conditional color. Application at JSC "Integral" (g. Minsk) of the SCAN-2015 installation provided, in particular, non-destructive detection of thermostimulated defects of semiconductor production blanks that were not detected by previously used methods, which made it possible to determine the sources of deviations in the technological process and increase the yield of suitable products. The non-destructive nature of the study provided the principal possibility of continuous control of semiconductor wafers with the return of samples to the technological process. Alternative control methods involve the use of satellite plates that are not used for the manufacture of real products, which reduces the reliability of the control results.

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ID : 184388

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